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BSS131H6327XTSA1

BSS131H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS131H6327XTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 854
  • Description: BSS131H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series SIPMOS®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Voltage 240V
Power Dissipation-Max 360mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 3.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 56μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 77pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V
Rise Time 3.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 13.7 ns
Continuous Drain Current (ID) 100mA
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 240V
Drain to Source Breakdown Voltage 240V
Dual Supply Voltage 240V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.4 V
Feedback Cap-Max (Crss) 4.2 pF
Height 1.1mm
Width 3.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet