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  • BSS138AKAR

BSS138AKAR

In a Pack of 100, N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138AKAR


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BSS138AKAR
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 598
  • Description: In a Pack of 100, N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138AKAR (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300mW Ta 1.06W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250mA
Input Capacitance (Ciss) (Max) @ Vds 47pF @ 30V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.51nC @ 4.5V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 5.2Ohm
Drain to Source Breakdown Voltage 60V
RoHS Status ROHS3 Compliant
See Relate Datesheet