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  • BSS159NH6327XTSA2

BSS159NH6327XTSA2

BSS159NH6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS159NH6327XTSA2
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 171
  • Description: BSS159NH6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 39pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 5V
Rise Time 2.9ns
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 230mA
Threshold Voltage -2.8V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
FET Feature Depletion Mode
Feedback Cap-Max (Crss) 5.9 pF
Height 1.1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Power Dissipation 360mW
Turn On Delay Time 3.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5 Ω @ 160mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 26μA
Halogen Free Halogen Free
See Relate Datesheet