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BSS192PH6327FTSA1

BSS192PH6327FTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS192PH6327FTSA1
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 661
  • Description: BSS192PH6327FTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2002
Series SIPMOS®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection DRAIN
Turn On Delay Time 4.7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id 2V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V
Current - Continuous Drain (Id) @ 25°C 190mA Ta
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Rise Time 5.2ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 190mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -250V
Drain to Source Breakdown Voltage -250V
Feedback Cap-Max (Crss) 8 pF
Height 1.5mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet