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  • BSS205NH6327XTSA1

BSS205NH6327XTSA1

BSS205NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS205NH6327XTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 781
  • Description: BSS205NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 1.2V @ 11μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
Rise Time 2.9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage 20V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 24 pF
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier PG-SOT23
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 500mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 5.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 2.5A, 4.5V
See Relate Datesheet