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BSS215PH6327XTSA1

BSS215PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS215PH6327XTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 324
  • Description: BSS215PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs (Max) ±12V
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage -20V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 150m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 11μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 346pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
Rise Time 9.7ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
See Relate Datesheet