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  • BSS314PEH6327XTSA1

BSS314PEH6327XTSA1

BSS314PEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS314PEH6327XTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 150
  • Description: BSS314PEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Published 2012
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 2V @ 6.3μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 294pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V
Factory Lead Time 10 Weeks
Rise Time 3.9ns
Mount Surface Mount
Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Package / Case TO-236-3, SC-59, SOT-23-3
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.5A
Number of Pins 3
Gate to Source Voltage (Vgs) 20V
Transistor Element Material SILICON
Max Dual Supply Voltage -30V
Operating Temperature -55°C~150°C TJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Packaging Tape & Reel (TR)
Lead Free Lead Free
See Relate Datesheet