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  • BSS670S2LH6327XTSA1

BSS670S2LH6327XTSA1

BSS670S2LH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS670S2LH6327XTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 431
  • Description: BSS670S2LH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 2.26nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 540mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain Current-Max (Abs) (ID) 0.54A
Drain-source On Resistance-Max 0.825Ohm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 540mA
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 360mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 270mA, 10V
Vgs(th) (Max) @ Id 2V @ 2.7μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 25V
Current - Continuous Drain (Id) @ 25°C 540mA Ta
See Relate Datesheet