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  • BSS806NEH6327XTSA1

BSS806NEH6327XTSA1

BSS806NEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS806NEH6327XTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 732
  • Description: BSS806NEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Vgs(th) (Max) @ Id 0.75V @ 11μA
Mounting Type Surface Mount
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Package / Case TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 2.5V
Number of Pins 3
Rise Time 9.9ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 2.5V
Weight 1.437803g
Vgs (Max) ±8V
Fall Time (Typ) 3.7 ns
Turn-Off Delay Time 12 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 20V
Drain-source On Resistance-Max 0.057Ohm
Operating Temperature -55°C~150°C TJ
Feedback Cap-Max (Crss) 29 pF
Height 1mm
Length 2.9mm
Packaging Tape & Reel (TR)
Width 1.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Published 2013
Series Automotive, AEC-Q101, HEXFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Factory Lead Time 10 Weeks
Turn On Delay Time 7.5 ns
FET Type N-Channel
Contact Plating Tin
Rds On (Max) @ Id, Vgs 57m Ω @ 2.3A, 2.5V
See Relate Datesheet