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  • BSS84

BSS84

This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-BSS84
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 853
  • Description: This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 10Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -50V
Technology MOSFET (Metal Oxide)
Current Rating -130mA
Number of Elements 1
Voltage 50V
Power Dissipation-Max 360mW Ta
Element Configuration Single
Current 13A
Power Dissipation 360mW
Turn On Delay Time 2.5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 73pF @ 25V
Current - Continuous Drain (Id) @ 25°C 130mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V
Rise Time 6.3ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 6.3 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 130mA
Threshold Voltage -1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -50V
Dual Supply Voltage -50V
Input Capacitance 73pF
Drain to Source Resistance 10Ohm
Rds On Max 10 Ω
Nominal Vgs -1.7 V
Height 930μm
Length 2.92mm
Width 3.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet