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  • BSS84AKV,115

BSS84AKV,115

BSS84AKV Series 50 V 7.5 Ohm 170 mA Dual P-Channel Trench MOSFET - SOT-666


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BSS84AKV,115
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 625
  • Description: BSS84AKV Series 50 V 7.5 Ohm 170 mA Dual P-Channel Trench MOSFET - SOT-666 (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 500mW
Terminal Form FLAT
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 330mW
Turn On Delay Time 13 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V
Rise Time 11ns
Drain to Source Voltage (Vdss) 50V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 170mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -50V
Drain Current-Max (Abs) (ID) 0.17A
Drain-source On Resistance-Max 8.5Ohm
Drain to Source Breakdown Voltage -50V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet