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BSS84DW-7-F

MOSFET 2P-CH 50V 0.13A SC70-6


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-BSS84DW-7-F
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 230
  • Description: MOSFET 2P-CH 50V 0.13A SC70-6 (Kg)

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Details

Tags

Parameters
Drain to Source Breakdown Voltage -50V
Dual Supply Voltage -50V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.6 V
Min Breakdown Voltage 50V
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 10Ohm
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -130mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BSS84DW
Pin Count 6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Drain to Source Voltage (Vdss) 50V
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 130mA
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.13A
See Relate Datesheet