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BSS84P-E6327
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Series | SIPMOS® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Current Rating | -170mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 360mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 360mW |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8 Ω @ 170mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds | 19pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 170mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
| Rise Time | 16.2ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Forward Voltage | -930mV |
| Continuous Drain Current (ID) | 170mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 8Ohm |
| RoHS Status | RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet