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BSZ019N03LSATMA1
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 22A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0025Ohm |
| DS Breakdown Voltage-Min | 30V |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 18 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | S-PDSO-N3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.1W Ta 69W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 69W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.9m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 22A Ta . 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Rise Time | 6.8ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
See Relate Datesheet