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BSZ031NE2LS5ATMA1

BSZ031NE2LS5 series 25V 40A 3.1 mOhm N-Ch S3O8 OptiMOS? 5


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ031NE2LS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 807
  • Description: BSZ031NE2LS5 series 25V 40A 3.1 mOhm N-Ch S3O8 OptiMOS? 5 (Kg)

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Shipping Cost

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 12V
Current - Continuous Drain (Id) @ 25°C 19A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 18.3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Continuous Drain Current (ID) 40A
Max Dual Supply Voltage 25V
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.0039Ohm
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 20 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet