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BSZ035N03LSGATMA1

Trans MOSFET N-CH 30V 40A 8-Pin TSDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ035N03LSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 625
  • Description: Trans MOSFET N-CH 30V 40A 8-Pin TSDSON EP (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-N8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.0057Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 150 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet