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  • BSZ040N04LSGATMA1

BSZ040N04LSGATMA1

Trans MOSFET N-CH 40V 18A 8-Pin TSDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ040N04LSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 788
  • Description: Trans MOSFET N-CH 40V 18A 8-Pin TSDSON EP (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package PG-TSDSON-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.1W Ta 69W Tc
Power Dissipation 69W
Turn On Delay Time 8.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 36μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 20V
Current - Continuous Drain (Id) @ 25°C 18A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 4.8ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Input Capacitance 5.1nF
Drain to Source Resistance 3.3mOhm
Rds On Max 4 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet