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BSZ0506NSATMA1

BSZ0506NSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ0506NSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 748
  • Description: BSZ0506NSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 27W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Factory Lead Time 18 Weeks
Rise Time 2.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Contact Plating Tin
Vgs (Max) ±20V
Mount Surface Mount
Continuous Drain Current (ID) 40A
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 20V
Package / Case 8-PowerTDFN
Number of Pins 8
Max Dual Supply Voltage 30V
Transistor Element Material SILICON
Drain Current-Max (Abs) (ID) 15A
Drain-source On Resistance-Max 0.0053Ohm
Operating Temperature -55°C~150°C TJ
Pulsed Drain Current-Max (IDM) 160A
Packaging Tape & Reel (TR)
Avalanche Energy Rating (Eas) 20 mJ
Published 2013
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
See Relate Datesheet