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  • BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ086P03NS3EGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 139
  • Description: BSZ086P03NS3EGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 105μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4785pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13.5A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 57.5nC @ 10V
Rise Time 46ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Factory Lead Time 18 Weeks
Mount Surface Mount
Fall Time (Typ) 8 ns
Mounting Type Surface Mount
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 13.5A
Package / Case 8-PowerTDFN
Threshold Voltage -2.5V
Number of Pins 8
Gate to Source Voltage (Vgs) 25V
Transistor Element Material SILICON
Max Dual Supply Voltage -30V
Drain to Source Breakdown Voltage -30V
Operating Temperature -55°C~150°C TJ
Height 1.1mm
Packaging Tape & Reel (TR)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Published 2008
Lead Free Contains Lead
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ESD PROTECTED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.1W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type P-Channel
See Relate Datesheet