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  • BSZ097N10NS5ATMA1

BSZ097N10NS5ATMA1

BSZ097N10NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ097N10NS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 335
  • Description: BSZ097N10NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.1W Ta 69W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 36μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 50V
Current - Continuous Drain (Id) @ 25°C 8A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Factory Lead Time 18 Weeks
Mount Surface Mount
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 40A
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 20V
Package / Case 8-PowerTDFN
Max Dual Supply Voltage 100V
Drain Current-Max (Abs) (ID) 8A
Number of Pins 8
Drain-source On Resistance-Max 0.0097Ohm
Transistor Element Material SILICON
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
See Relate Datesheet