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  • BSZ100N06LS3GATMA1

BSZ100N06LS3GATMA1

BSZ100N06LS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ100N06LS3GATMA1
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 420
  • Description: BSZ100N06LS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 23μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 30V
Current - Continuous Drain (Id) @ 25°C 11A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 20A
Avalanche Energy Rating (Eas) 55 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet