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  • BSZ105N04NSGATMA1

BSZ105N04NSGATMA1

Trans MOSFET N-CH 40V 11A 8-Pin TSDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ105N04NSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 682
  • Description: Trans MOSFET N-CH 40V 11A 8-Pin TSDSON EP (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 8
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 14μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 20V
Current - Continuous Drain (Id) @ 25°C 11A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 1.2ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.6 ns
Turn-Off Delay Time 9.5 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 20 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet