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BSZ120P03NS3EGATMA1

Trans MOSFET P-CH 30V 40A 8-Pin TSDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ120P03NS3EGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 469
  • Description: Trans MOSFET P-CH 30V 40A 8-Pin TSDSON EP (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ESD PROTECTED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 73μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3360pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.02Ohm
Avalanche Energy Rating (Eas) 73 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 10 Weeks
Mount Surface Mount
See Relate Datesheet