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  • BSZ120P03NS3GATMA1

BSZ120P03NS3GATMA1

BSZ120P03NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ120P03NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 103
  • Description: BSZ120P03NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
JESD-609 Code e3
Rise Time 11ns
Pbfree Code no
Drain to Source Voltage (Vdss) 30V
Part Status Active
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Vgs (Max) ±25V
Number of Terminations 5
ECCN Code EAR99
Fall Time (Typ) 5 ns
Technology MOSFET (Metal Oxide)
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 40A
Terminal Position DUAL
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 25V
Terminal Form FLAT
Max Dual Supply Voltage -30V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Drain-source On Resistance-Max 0.02Ohm
Reach Compliance Code not_compliant
Avalanche Energy Rating (Eas) 73 mJ
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pin Count 8
Lead Free Contains Lead
JESD-30 Code S-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
Factory Lead Time 18 Weeks
Contact Plating Tin
Case Connection DRAIN
Mount Surface Mount
Turn On Delay Time 13 ns
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
FET Type P-Channel
Number of Pins 8
Transistor Application SWITCHING
Transistor Element Material SILICON
Rds On (Max) @ Id, Vgs 12m Ω @ 20A, 10V
Operating Temperature -55°C~150°C TJ
Vgs(th) (Max) @ Id 3.1V @ 73μA
Packaging Tape & Reel (TR)
Halogen Free Halogen Free
Published 2011
Input Capacitance (Ciss) (Max) @ Vds 3360pF @ 15V
Series OptiMOS™
Current - Continuous Drain (Id) @ 25°C 11A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
See Relate Datesheet