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BSZ165N04NSGATMA1

BSZ165N04NSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ165N04NSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 221
  • Description: BSZ165N04NSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 25W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection DRAIN
Turn On Delay Time 5.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 10μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 20V
Current - Continuous Drain (Id) @ 25°C 8.9A Ta 31A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 1ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 6.8 ns
Continuous Drain Current (ID) 8.9A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 5 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet