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BSZ16DN25NS3GATMA1

Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ16DN25NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 857
  • Description: Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP (Kg)

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Details

Tags

Parameters
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 62.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 32μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.9A Tc
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 10.9A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 250V
Drain-source On Resistance-Max 0.165Ohm
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 120 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-N5
See Relate Datesheet