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  • BSZ900N15NS3GATMA1

BSZ900N15NS3GATMA1

BSZ900N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ900N15NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 677
  • Description: BSZ900N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 30 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 38W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 20μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 75V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
See Relate Datesheet