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BTS244ZE3062AATMA2

MOSFET N-CH 55V 35A TO220-5


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BTS244ZE3062AATMA2
  • Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Datasheet: PDF
  • Stock: 701
  • Description: MOSFET N-CH 55V 35A TO220-5 (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Number of Pins 5
Supplier Device Package PG-TO263-5-2
Weight 1.59999g
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series TEMPFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 35A
Number of Channels 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Power Dissipation 170W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Input Capacitance 2.66nF
FET Feature Temperature Sensing Diode
Drain to Source Resistance 13mOhm
Rds On Max 13 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet