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  • BTS247ZE3062AATMA2

BTS247ZE3062AATMA2

Trans MOSFET N-CH 55V 33A Automotive 5-Pin(4+Tab) D2PAK T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BTS247ZE3062AATMA2
  • Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Datasheet: PDF
  • Stock: 890
  • Description: Trans MOSFET N-CH 55V 33A Automotive 5-Pin(4+Tab) D2PAK T/R (Kg)

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Number of Pins 5
Supplier Device Package PG-TO263-5-2
Weight 1.59999g
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TEMPFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 120W Tc
Element Configuration Single
Power Dissipation 120W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Input Capacitance 1.73nF
FET Feature Temperature Sensing Diode
Drain to Source Resistance 18mOhm
Rds On Max 18 mΩ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet