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BTS3410GXUMA1

N-Channel PMIC HITFET? Series BTS3410 8 Pin 12V 8-SOIC (0.154, 3.90mm Width)


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BTS3410GXUMA1
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 979
  • Description: N-Channel PMIC HITFET? Series BTS3410 8 Pin 12V 8-SOIC (0.154, 3.90mm Width) (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
Series HITFET®
JESD-609 Code e3
Feature Auto Restart
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 800mW
Technology MOS
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 2
Supply Voltage 12V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BTS3410
Pin Count 8
Number of Outputs 2
Qualification Status Not Qualified
Output Type N-Channel
Max Output Current 1.3A
Interface On/Off
Nominal Supply Current 2mA
Output Configuration Low Side
Power Dissipation 800mW
Output Current 1.3A
Voltage - Supply (Vcc/Vdd) Not Required
Input Type Non-Inverting
Switch Type General Purpose
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 42V
Nominal Input Voltage 10V
Ratio - Input:Output 1:1
Voltage - Load 42V Max
Max Dual Supply Voltage 42V
Fault Protection Current Limiting (Fixed), Over Temperature, Over Voltage
Turn On Time 100 μs
Output Peak Current Limit-Nom 7.5A
Rds On (Typ) 150m Ω
Turn Off Time 100 μs
Built-in Protections TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
Height Seated (Max) 1.75mm
Length 5mm
Width 4mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BTS3410GXUMA1 Description


The BTS3410GXUMA1 is a Smart Low Side Power Switch. Smart SIPMOS technology N channel vertical power FET. fully secured by built-in security measures. An electrical connection from a ground or voltage source to a load is made possible by a power switch. It conserves energy over numerous voltage rails and safeguards against harm to subsystems. Additionally, it reduces the size of printed circuit boards (PCBs) and offers increased component safety and inrush current protection.



BTS3410GXUMA1 Features


  • Overload protection

  • Short circuit protection

  • Overvoltage protection

  • Current limitation

  • Analog driving possible

  • Logic Level Input

  • Input Protection (ESD)

  • Thermal shutdown with auto restart

  • Green product (RoHS compliant)



BTS3410GXUMA1 Applications


  • All kinds of resistive, inductive and capacitive loads in switching or linear applications

  • μC compatible power switch for 12 V DC applications

  • Replaces electromechanical relays and discrete circuits

  • Provides an electrical connection from a voltage source or ground to a load

  • Provides enhanced component protection, inrush current protection