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  • BUK754R0-55B,127

BUK754R0-55B,127

MOSFET N-CH 55V 75A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK754R0-55B,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 612
  • Description: MOSFET N-CH 55V 75A TO220AB (Kg)

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Details

Tags

Parameters
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 774A
Avalanche Energy Rating (Eas) 1200 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6776pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 51ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 71 ns
Continuous Drain Current (ID) 193A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
See Relate Datesheet