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  • BUK7626-100B,118

BUK7626-100B,118

Trans MOSFET N-CH 100V 49A 3-Pin(2+Tab) D2PAK T/R


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7626-100B,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 236
  • Description: Trans MOSFET N-CH 100V 49A 3-Pin(2+Tab) D2PAK T/R (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 49A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 49A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.026Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 197A
Avalanche Energy Rating (Eas) 144 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 157W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 157W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2891pF @ 25V
See Relate Datesheet