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  • BUK78150-55A/CUF

BUK78150-55A/CUF

MOSFET N-CH 55V 5.5A SOT223


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK78150-55A/CUF
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 157
  • Description: MOSFET N-CH 55V 5.5A SOT223 (Kg)

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Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 8W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Rise Time 26ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 22A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 25 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
See Relate Datesheet