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BUK7907-55AIE,127

MOSFET N-CH 55V 75A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7907-55AIE,127
  • Package: TO-220-5
  • Datasheet: PDF
  • Stock: 956
  • Description: MOSFET N-CH 55V 75A TO220AB (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-5
Surface Mount NO
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 5
Number of Elements 1
Power Dissipation-Max 272W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 272W
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Rise Time 115ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 111 ns
Turn-Off Delay Time 159 ns
Continuous Drain Current (ID) 140A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 460 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet