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BUK7909-75ATE,127

MOSFET N-CH 75V 75A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7909-75ATE,127
  • Package: TO-220-5
  • Datasheet: PDF
  • Stock: 943
  • Description: MOSFET N-CH 75V 75A TO220AB (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 121nC @ 10V
Rise Time 108ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 185 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 75V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 739 mJ
FET Feature Temperature Sensing Diode
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-5
Surface Mount NO
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 5
Number of Elements 1
Power Dissipation-Max 272W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 272W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
See Relate Datesheet