English

All Products

View All >>
  • BUK7909-75ATE,127

BUK7909-75ATE,127

MOSFET N-CH 75V 75A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7909-75ATE,127
  • Package: TO-220-5
  • Datasheet: PDF
  • Stock: 943
  • Description: MOSFET N-CH 75V 75A TO220AB (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 121nC @ 10V
Rise Time 108ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 185 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 75V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 739 mJ
FET Feature Temperature Sensing Diode
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-5
Surface Mount NO
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 5
Number of Elements 1
Power Dissipation-Max 272W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 272W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
See Relate Datesheet