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BUK7K25-40E,115
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 32W |
| Terminal Form | GULL WING |
| Pin Count | 8 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 32W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.4 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 525pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9nC @ 10V |
| Rise Time | 4.5ns |
| Fall Time (Typ) | 5.2 ns |
| Turn-Off Delay Time | 8.3 ns |
| Continuous Drain Current (ID) | 27A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 40V |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 107A |
| Avalanche Energy Rating (Eas) | 10 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet