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BUK7K25-40E,115

MOSFET 2N-CH 40V 27A LFPAK56D


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7K25-40E,115
  • Package: SOT-1205, 8-LFPAK56
  • Datasheet: PDF
  • Stock: 241
  • Description: MOSFET 2N-CH 40V 27A LFPAK56D (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-1205, 8-LFPAK56
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Max Power Dissipation 32W
Terminal Form GULL WING
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 32W
Case Connection DRAIN
Turn On Delay Time 4.4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 525pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 10V
Rise Time 4.5ns
Fall Time (Typ) 5.2 ns
Turn-Off Delay Time 8.3 ns
Continuous Drain Current (ID) 27A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 107A
Avalanche Energy Rating (Eas) 10 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet