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BUK7K5R6-30E,115

MOSFET 2N-CH 30V 40A LFPAK56D


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7K5R6-30E,115
  • Package: SOT-1205, 8-LFPAK56
  • Datasheet: PDF
  • Stock: 970
  • Description: MOSFET 2N-CH 30V 40A LFPAK56D (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-1205, 8-LFPAK56
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature AVALANCHE RATED
Max Power Dissipation 64W
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9.2 ns
Power - Max 64W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1969pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29.7nC @ 10V
Rise Time 10ns
Fall Time (Typ) 12.9 ns
Turn-Off Delay Time 17.9 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0056Ohm
Pulsed Drain Current-Max (IDM) 314A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
See Relate Datesheet