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  • BUK7Y14-80EX

BUK7Y14-80EX

MOSFET Transistor, N Channel, 65 A, 80 V, 0.0092 ohm, 10 V, 3 V RoHS Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7Y14-80EX
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 173
  • Description: MOSFET Transistor, N Channel, 65 A, 80 V, 0.0092 ohm, 10 V, 3 V RoHS Compliant: Yes (Kg)

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Details

Tags

Parameters
Height 1.2mm
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 147W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 147W
Case Connection DRAIN
Turn On Delay Time 9.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3155pF @ 25V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 44.8nC @ 10V
Rise Time 13.2ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17.9 ns
Turn-Off Delay Time 33.3 ns
Continuous Drain Current (ID) 65A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 259A
Avalanche Energy Rating (Eas) 76.8 mJ
Max Junction Temperature (Tj) 175°C
See Relate Datesheet