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BUK7Y3R5-40E,115

NEXPERIA - BUK7Y3R5-40E,115 - N-CHANNEL 40 V, 3.5 M OHMS STANDARD LEVEL MOSFET IN LFPAK56


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7Y3R5-40E,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 524
  • Description: NEXPERIA - BUK7Y3R5-40E,115 - N-CHANNEL 40 V, 3.5 M OHMS STANDARD LEVEL MOSFET IN LFPAK56 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 167W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 13.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3583pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 49.4nC @ 10V
Rise Time 24.9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20.4 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0035Ohm
Pulsed Drain Current-Max (IDM) 622A
Avalanche Energy Rating (Eas) 135 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet