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BUK7Y98-80EX

MOSFET N-CH 80V 12.3A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7Y98-80EX
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 209
  • Description: MOSFET N-CH 80V 12.3A LFPAK (Kg)

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Details

Tags

Parameters
Drain-source On Resistance-Max 0.098Ohm
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 9.02 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 37W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 98m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 498pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12.3A Tc
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
Rise Time 3.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.7 ns
Turn-Off Delay Time 7.3 ns
Continuous Drain Current (ID) 12.3A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
See Relate Datesheet