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BUK9575-55A,127

MOSFET N-CH 55V 20A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9575-55A,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 109
  • Description: MOSFET N-CH 55V 20A TO220AB (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 68m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 643pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Rise Time 47ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 28 ns
Contact Plating Tin
Continuous Drain Current (ID) 20A
Mounting Type Through Hole
JEDEC-95 Code TO-220AB
Package / Case TO-220-3
Gate to Source Voltage (Vgs) 10V
Surface Mount NO
Number of Pins 3
Max Dual Supply Voltage 55V
Weight 4.535924g
Drain to Source Breakdown Voltage 55V
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) 72 mJ
Operating Temperature -55°C~175°C TJ
Height 6.35mm
Packaging Tube
Length 6.35mm
Published 2011
Width 6.35mm
Series TrenchMOS™
Radiation Hardening No
RoHS Status RoHS Compliant
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 62W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 62W
Case Connection DRAIN
See Relate Datesheet