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  • BUK9606-55A,118

BUK9606-55A,118

MOSFET N-CH 55V 75A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9606-55A,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 408
  • Description: MOSFET N-CH 55V 75A D2PAK (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tj
Rise Time 180ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 235 ns
Turn-Off Delay Time 420 ns
Continuous Drain Current (ID) 154A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 55V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0067Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 616A
Avalanche Energy Rating (Eas) 1100 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet