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BUK98150-55A/CUF

MOSFET N-CH 55V 5.5A SOT223


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK98150-55A/CUF
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 937
  • Description: MOSFET N-CH 55V 5.5A SOT223 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 8W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 137m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 5V
Rise Time 57ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.161Ohm
Pulsed Drain Current-Max (IDM) 22A
Avalanche Energy Rating (Eas) 22 mJ
See Relate Datesheet