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BUK98180-100A,115

Trans MOSFET N-CH 100V 4.6A Automotive 4-Pin(3+Tab) SC-73 T/R


  • Manufacturer: NXP USA Inc.
  • Origchip NO: 568-BUK98180-100A,115
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 617
  • Description: Trans MOSFET N-CH 100V 4.6A Automotive 4-Pin(3+Tab) SC-73 T/R (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 8W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 173m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 619pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±10V
Drain Current-Max (Abs) (ID) 4.6A
Drain-source On Resistance-Max 0.201Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 16 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet