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  • BUK9K52-60E,115

BUK9K52-60E,115

Dual N-Channel 60 V 49 mOhm 10 nC SMT Logic Level Mosfet - LFPAK56


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9K52-60E,115
  • Package: SOT-1205, 8-LFPAK56
  • Datasheet: PDF
  • Stock: 948
  • Description: Dual N-Channel 60 V 49 mOhm 10 nC SMT Logic Level Mosfet - LFPAK56 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-1205, 8-LFPAK56
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Max Power Dissipation 32W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 32W
Case Connection DRAIN
Turn On Delay Time 6.2 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 725pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 10.1ns
Fall Time (Typ) 9 ns
Turn-Off Delay Time 10.7 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.055Ohm
Pulsed Drain Current-Max (IDM) 64A
Avalanche Energy Rating (Eas) 11.9 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
See Relate Datesheet