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  • BUK9K89-100E,115

BUK9K89-100E,115

MOSFET 2N-CH 100V 12.5A LFPAK56D


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9K89-100E,115
  • Package: SOT-1205, 8-LFPAK56
  • Datasheet: PDF
  • Stock: 158
  • Description: MOSFET 2N-CH 100V 12.5A LFPAK56D (Kg)

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Details

Tags

Parameters
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection DRAIN
Turn On Delay Time 3.6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1108pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V
Rise Time 5.8ns
Fall Time (Typ) 12.1 ns
Turn-Off Delay Time 22.1 ns
Continuous Drain Current (ID) 12.5A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 50A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-1205, 8-LFPAK56
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature AVALANCHE RATED
Max Power Dissipation 38W
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
See Relate Datesheet