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BUK9M28-80EX

MOSFET N-CH 80V 33A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9M28-80EX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 751
  • Description: MOSFET N-CH 80V 33A LFPAK (Kg)

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Factory Lead Time 26 Weeks
Mount Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2275pF @ 25V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 33A Tc
Package / Case SOT-1210, 8-LFPAK33
Gate Charge (Qg) (Max) @ Vgs 16.7nC @ 5V
Transistor Element Material SILICON
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 5V
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Vgs (Max) ±10V
Series Automotive, AEC-Q101, TrenchMOS™
Continuous Drain Current (ID) 33A
Part Status Active
Drain-source On Resistance-Max 0.028Ohm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pulsed Drain Current-Max (IDM) 131A
Number of Terminations 4
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 42.2 mJ
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 75W Tc
Operating Mode ENHANCEMENT MODE
See Relate Datesheet