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BUK9M35-80EX

NEXPERIA - BUK9M35-80EX - MOSFET Transistor, N Channel, 26 A, 80 V, 0.025 ohm, 10 V, 1.7 V


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9M35-80EX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 726
  • Description: NEXPERIA - BUK9M35-80EX - MOSFET Transistor, N Channel, 26 A, 80 V, 0.025 ohm, 10 V, 1.7 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 62W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1804pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 5V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Continuous Drain Current (ID) 26A
Drain-source On Resistance-Max 0.035Ohm
Pulsed Drain Current-Max (IDM) 106A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 32.3 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet