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BUK9M52-40EX

MOSFET N-CH 40V 17.6A LFPAK33


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9M52-40EX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 487
  • Description: MOSFET N-CH 40V 17.6A LFPAK33 (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 407pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17.6A
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Drain Current-Max (Abs) (ID) 17.6A
Drain-source On Resistance-Max 0.052Ohm
Pulsed Drain Current-Max (IDM) 70A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 4.98 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31W
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
See Relate Datesheet