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  • BUK9Y07-30B,115

BUK9Y07-30B,115

MOSFET N-CH 30V 75A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y07-30B,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 117
  • Description: MOSFET N-CH 30V 75A LFPAK (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 28.1nC @ 5V
Rise Time 64.5ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 64.8 ns
Turn-Off Delay Time 82.3 ns
Continuous Drain Current (ID) 75A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.008Ohm
Pulsed Drain Current-Max (IDM) 356A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 105W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 105W
Case Connection DRAIN
Turn On Delay Time 25.9 ns
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet